Quantum effect in oxide thickness determination from capacitance measurement

Author

Yang, K. ; Ya-Chin King ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1999

fDate

14-16 June 1999

Firstpage

77

Lastpage

78

Abstract

Simple quantitative models of charge displacement due to the quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (T/sub DC/) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and T/sub DC/ can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.

Keywords

MOSFET; capacitance measurement; quantum interference phenomena; semiconductor device measurement; semiconductor device models; thickness measurement; MOSFET current modeling; SiO/sub 2/-Si; capacitance measurement; charge displacement models; effective oxide thickness; electrical thickness; gate oxide thickness measurements; oxide thickness determination; physical oxide thickness; quantitative models; quantum effect; target physical thickness; Capacitance measurement; Capacitance-voltage characteristics; Charge carrier processes; Current measurement; Data mining; Ellipsometry; MOSFET circuits; Predictive models; Quantum computing; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799348

Filename

799348