Polycrystalline silicon field emitters

Author

Boswell, E.C. ; Huq, S.E. ; Huang, M. ; Prewett, P.D. ; Wilshaw, P.R.

Author_Institution

Dept. of Mater., Oxford Univ., UK

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

181

Lastpage

185

Abstract

Field emission of electrons from polycrystalline silicon tips has been investigated. Two process routes, wet and dry etching, were used to form the tips, and their structures were computed using a transmission electron microscope (TEM). TEM micrographs of the wet-etched polysilicon tips show the presence of many individual grains at the emitter tip. Field emission current-voltage data was collected from the wet-etched polycrystalline emitter tips immediately after etching and after oxidation-sharpening. This data was then compared with that collected from single crystal silicon emitters.

Keywords

electron field emission; elemental semiconductors; etching; silicon; sputter etching; transmission electron microscopy; vacuum microelectronics; Si; Si field emitters; TEM micrographs; dry etching; emitter tip; field emission I-V data; grains; oxidation-sharpening; polycrystalline Si; polysilicon; transmission electron microscopy; wet etching; Chemical vapor deposition; Glass; Hafnium; Optical buffering; Optical device fabrication; Plasma applications; Plasma chemistry; Resists; Silicon compounds; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487020

Filename

487020