DocumentCode
3252023
Title
Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications
Author
Uchiyama, Akira ; Baba, Shunsuke ; Nagatomo, Yoshiki ; Ida, Jiro
Author_Institution
Semicond. R&D Div., Oki Electr. Ind. Co. Ltd., Tokyo
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
15
Lastpage
16
Abstract
Today, various specifications are demanded to LSI, which is indispensable for industry and our life. For example, in the field of mobile equipments, watch and sensor devices in ubiquitous network, low-power-consumption devices are required. On the other hand, in the field of high-end processing, high performance devices are required. Silicon-on-insulator (SOI) devices have various advantages over bulk Si devices in the above-mentioned fields (Colingue, 2004). SOI-based sensors have also been introduced (Wan, 2005). In this paper, aiming for ultra-low-power digital analog and RF applications, we present major characteristics and issues of fully-depleted SOI (FD-SOI), and discuss the approaches to expanding the capability of FD-SOI devices
Keywords
digital integrated circuits; low-power electronics; radiofrequency integrated circuits; semiconductor technology; sensors; silicon-on-insulator; RF applications; SOI sensors; Si; analog applications; fully depleted SOI; radio frequency applications; ultra low power digital applications; Capacitance; Conference proceedings; Dielectric losses; Dielectric substrates; Electrical equipment industry; Intersymbol interference; Radio frequency; Research and development; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284409
Filename
4062857
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