• DocumentCode
    3252023
  • Title

    Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications

  • Author

    Uchiyama, Akira ; Baba, Shunsuke ; Nagatomo, Yoshiki ; Ida, Jiro

  • Author_Institution
    Semicond. R&D Div., Oki Electr. Ind. Co. Ltd., Tokyo
  • fYear
    2006
  • fDate
    2-5 Oct. 2006
  • Firstpage
    15
  • Lastpage
    16
  • Abstract
    Today, various specifications are demanded to LSI, which is indispensable for industry and our life. For example, in the field of mobile equipments, watch and sensor devices in ubiquitous network, low-power-consumption devices are required. On the other hand, in the field of high-end processing, high performance devices are required. Silicon-on-insulator (SOI) devices have various advantages over bulk Si devices in the above-mentioned fields (Colingue, 2004). SOI-based sensors have also been introduced (Wan, 2005). In this paper, aiming for ultra-low-power digital analog and RF applications, we present major characteristics and issues of fully-depleted SOI (FD-SOI), and discuss the approaches to expanding the capability of FD-SOI devices
  • Keywords
    digital integrated circuits; low-power electronics; radiofrequency integrated circuits; semiconductor technology; sensors; silicon-on-insulator; RF applications; SOI sensors; Si; analog applications; fully depleted SOI; radio frequency applications; ultra low power digital applications; Capacitance; Conference proceedings; Dielectric losses; Dielectric substrates; Electrical equipment industry; Intersymbol interference; Radio frequency; Research and development; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International SOI Conference, 2006 IEEE
  • Conference_Location
    Niagara Falls, NY
  • ISSN
    1078-621X
  • Print_ISBN
    1-4244-0289-1
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2006.284409
  • Filename
    4062857