Fully functional 0.5-/spl mu/m 64-kbit embedded SBT FeRAM using a new low temperature SBT deposition technique

Author

Eshita, T. ; Nakamura, K. ; Mushiga, M. ; Itho, A. ; Miyagaki, S. ; Yamawaki, H. ; Aoki, M. ; Kishii, S. ; Arimoto, Y.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

139

Lastpage

140

Abstract

0.5 /spl mu/m design rule embedded 64 kbit SBT (SrBi/sub 2/(Ta,Nb)/sub 2/O/sub 9/) FeRAMs (ferroelectric RAM) are fabricated using a new low temperature SBT deposition technique. The developed deposition technique has successfully lowered SBT crystallization temperature from 800/spl deg/C to 700/spl deg/C, resulting in co-fabrication of FeRAM and fine CMOS logic devices with W plugs. The fabricated devices are proven to be fully functional.

Keywords

CMOS digital integrated circuits; bismuth compounds; crystallisation; ferroelectric storage; ferroelectric thin films; integrated circuit design; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated memory circuits; random-access storage; strontium compounds; 0.5 micron; 64 kbit; 700 C; 800 C; CMOS process; FeRAM; SBT crystallization temperature; SrBi/sub 2/(TaNb)/sub 2/O/sub 9/; W; W plugs; co-fabrication; deposition technique; design rule; embedded SBT FeRAM; embedded SrBi/sub 2/(Ta,Nb)/sub 2/O/sub 9/ FeRAMs; ferroelectric RAM; fine CMOS logic devices; fully functional devices; low temperature SBT deposition technique; Capacitors; Contact resistance; Crystallization; Ferroelectric films; Leakage current; Nonvolatile memory; Random access memory; Temperature; Turing machines; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799382

Filename

799382