Single Metal Gate with Dual Work Functions for FD-SOI and UTB Double Gate Technologies

Author

Pham, Daniel ; Luan, Hongfa ; Mathur, Kaveri ; Sassman, Barry ; Nguyen, Billy ; Brown, George ; Yang, Ji-Woon ; Oh, Jungwoo ; Zeitzoff, Peter ; Larson, Larry

Author_Institution

SEMATECH, Austin, TX

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

25

Lastpage

26

Abstract

In this paper, we demonstrate an integratable single metal gate (TiSiN) on Hf_xSi_xO_y with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1mum and 0.2mum devices, respectively

Keywords

MOSFET; hafnium compounds; high-k dielectric thin films; silicon-on-insulator; titanium compounds; work function; -0.37 V; 0.2 micron; 0.32 V; 1 micron; Hf_xSi_xO_y; HfSiO; SOI; Si; TiSiN; UTB double gate technology; double gate ultra-thin body devices; dual work functions; integratable single metal gate; nMOS device; pMOS devices; single metal gate technology; Electric resistance; Fabrication; High-K gate dielectrics; Immune system; Intrusion detection; MOS devices; Silicidation; Silicon; Threshold voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284414

Filename

4062862