• DocumentCode
    3252199
  • Title

    A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure

  • Author

    Suzuki, H. ; Yoshida, H. ; Kinoshita, Y. ; Fujii, H. ; Yamazaki, T.

  • Author_Institution
    ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan
  • fYear
    1999
  • fDate
    14-16 June 1999
  • Firstpage
    149
  • Lastpage
    150
  • Abstract
    This paper presents an advanced RF mixed-signal BiCMOS technology. A single-polysilicon bipolar transistor with a high maximum frequency of oscillation (f/sub max/) is successfully implemented into a 0.15 /spl mu/m dual gate CMOS process. To achieve such a bipolar transistor, a cobalt silicide (CoSi/sub 2/) ring-shaped extrinsic-base structure is newly developed. This bipolar transistor demonstrates 73 GHz f/sub max/, minimum noise figure (NF/sub min/) of 1.1 dB and a cut-off frequency emitter-to-collector breakdown voltage (f/sub T//spl middot/BV/sub CEO/) product of 160 GHz/spl middot/V, which is competitive with previously reported SiGe-based technology.
  • Keywords
    BiCMOS integrated circuits; MMIC; cobalt compounds; electric breakdown; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit noise; 0.15 micron; 1.1 dB; 73 GHz; CoSi/sub 2/; CoSi/sub 2/ ring-shaped extrinsic-base structure; RF BiCMOS technology; RF mixed-signal BiCMOS technology; Si; SiGe-based technology; bipolar transistor; cobalt silicide ring extrinsic-base structure; cut-off frequency emitter-to-collector breakdown voltage product; dual gate CMOS process; maximum oscillation frequency; minimum noise figure; single-polysilicon bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Cobalt; Cutoff frequency; Noise figure; Noise measurement; Radio frequency; Silicides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    4-930813-93-X
  • Type

    conf

  • DOI
    10.1109/VLSIT.1999.799387
  • Filename
    799387