• DocumentCode
    3252233
  • Title

    Electron microscopy analysis of amorphous and crystalline diamond coated silicon field emitters

  • Author

    Myers, A.F. ; Liu, J. ; McClure, M.T. ; Camphausen, S.M. ; Cuomo, J.J. ; Hren, J.J.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
  • fYear
    1995
  • fDate
    July 30 1995-Aug. 3 1995
  • Firstpage
    325
  • Lastpage
    329
  • Abstract
    The present paper concentrates on the morphology and microstructure of the coatings, as determined from electron microscopy investigations of coated Si emitters. The microscopy techniques used in this study include scanning electron microscopy to examine the macroscopic diamond morphology; high resolution TEM to study both detailed morphology and interface structure; selected area electron diffraction to determine if the film is crystalline or amorphous and to identify the coating species; and electron energy loss spectroscopy to determine the nature of the carbon bonding-sp/sup 3/, sp/sup 2/, or amorphous-in the film.
  • Keywords
    diamond; electron diffraction; electron field emission; elemental semiconductors; interface structure; scanning electron microscopy; silicon; transmission electron microscopy; vacuum microelectronics; C-Si; TEM; area electron diffraction; carbon bonding; coating species; electron microscopy analysis; field emitters; interface structure; morphology; scanning electron microscopy; Amorphous materials; Coatings; Crystal microstructure; Crystallization; Electron emission; Electron microscopy; Energy resolution; Morphology; Scanning electron microscopy; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
  • Conference_Location
    Portland, OR, USA
  • Print_ISBN
    0-7803-2143-X
  • Type

    conf

  • DOI
    10.1109/IVMC.1995.487059
  • Filename
    487059