An improved nonlinear DC I–V characteristics model for nanometer range GaAs MESFETs

An improved nonlinear current-voltage (I-V) characteristics model for nanometer range GaAs MESFETs has been developed. In this regard, Ahmed et al. model for submicron GaAs MESFETs has been modified. In this modification, the effects of both drain-to-source voltage, V_DS, and gate-to-source voltage, V_GS, on the output conductance, g_d, have been incorporated. Moreover, the effect of V_GS on the onset of I-V characteristics saturation has been considered. The developed model has been compared to Ahmed et al. model. For this comparison, root mean square (RMS) error technique is employed. An algorithm has also been developed for the optimization of the model parameters. Nanometer range MESFETs of different aspect ratios have been modeled with greater accuracy by the developed model. The model should be a useful tool for the designing of future integrated circuits with nanometer MESFETs.