DocumentCode
3252660
Title
Mobility behavior in narrow Ω-gateFETs devices
Author
Ritzenthaler, R. ; Dupre, C. ; Mescot, X. ; Faynot, O. ; Ernst, T. ; Barbé, J.C. ; Jahan, C. ; Brevard, L. ; Andrieu, F. ; Deleonibus, S. ; Cristoloveanu, S.
Author_Institution
LETI, Grenoble
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
77
Lastpage
78
Abstract
In this paper, the mobility of Q-gateFETs was studied in order to investigate the properties of the top and lateral conduction channels, as a function of crystal orientation and quality. The effect of the process-induced strain on the mobility was also considered
Keywords
crystals; field effect transistors; semiconductor device testing; silicon-on-insulator; crystal orientation; crystal quality; mobility Q-gateFET devices; process-induced strain; Capacitive sensors; Conference proceedings; FETs; MOS devices; Parasitic capacitance; Silicon; Strain measurement; Surface resistance; Tensile stress; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284441
Filename
4062889
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