DocumentCode
3253201
Title
Influence of Temperature and Stress Field on Optical Voltage Sensor
Author
Xia, Xiao ; Xu Yan ; Xu Ken ; Ye Miao-yuan
Author_Institution
Coll. of Electr. & Electron. Eng., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2009
fDate
14-16 Aug. 2009
Firstpage
1
Lastpage
4
Abstract
The influence of temperature field and stress field on OVS has been analyzed theoretically. The law that temperature Held and stress field affect the stability of optical voltage sensor (OVS) was obtained. Namely, thermal-optic effect by temperature and elato-optic by compressive stress of SF6 have no influence on the performance of OVS, but the phase retardation resulted through thermal-stress by the temperature variation is superimposed on the phase retardation produced through elastro-optic effect and varies with temperature, which affects the stability of OVS.
Keywords
optical sensors; voltage measurement; compressive stress; elato-optic; optical voltage sensor; phase retardation; stress field effect; temperature effect; thermal-optic effect; Compressive stress; Electric variables measurement; Optical distortion; Optical refraction; Optical sensors; Optical variables control; Power system stability; Temperature sensors; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location
Wuhan
Print_ISBN
978-1-4244-4412-0
Type
conf
DOI
10.1109/SOPO.2009.5230216
Filename
5230216
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