DocumentCode
3253543
Title
Effects of Temperature on Metal Gate FinFET Circuit Performance
Author
Marshall, Andrew ; Xiong, Weize ; Cleavelin, C. Rinn ; Matthews, Ken ; Konblinger, Gerhard ; Pacha, Christian ; von Armin, K. ; Schulz, Thomas ; Schruefer, Klaus ; Patruno, Paul
Author_Institution
Texas Instruments Inc., Dallas, TX
fYear
2006
fDate
2-5 Oct. 2006
Firstpage
163
Lastpage
164
Abstract
FinFETs are being investigated as an alternative technology to bulk material for sub 45nm process nodes. Here we demonstrate the advantage of FinFET circuits at high temperature with performance of analog and digital building blocks up to 300degC
Keywords
MOSFET; current mirrors; network analysis; operational amplifiers; oscillators; 300 C; 45 nm; FinFET; circuit analysis; current mirrors; operational amplifiers; ring oscillators; Circuit optimization; FinFETs; Inverters; MOS devices; Mirrors; Operational amplifiers; Ring oscillators; Temperature distribution; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
International SOI Conference, 2006 IEEE
Conference_Location
Niagara Falls, NY
ISSN
1078-621X
Print_ISBN
1-4244-0289-1
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2006.284488
Filename
4062936
Link To Document