Capacitive-division traveling-wave amplifier with 340 GHz gain-bandwidth product

Author

Pusl, J. ; Agarwal, Basant ; Pullela, R. ; Nguyen, L.D. ; Le, M.V. ; Rodwell, Mark J. W. ; Larson, Lawrence ; Jensen, J.F. ; Yu, R.Y. ; Case, M.G.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

1661

Abstract

We report capacitive-division traveling-wave amplifiers having measured midband gains of 8 dB with a 1-98 GHz 3-dB-bandwidth, and 11 dB gain with a 1-96 GHz bandwidth. The capacitive-division topology raises the input Q of each cell, giving the amplifier increased bandwidth over conventional designs with the same active device technology; using 0.15-/spl mu/m gate length InGaAs-InAlAs HEMTs, bandwidths exceeding 150 GHz are feasible.<>

Keywords

HEMT integrated circuits; MMIC amplifiers; field effect MIMIC; millimetre wave amplifiers; travelling wave amplifiers; wideband amplifiers; 0.15 micron; 1 to 98 GHz; 150 GHz; 8 to 11 dB; 96 to 98 GHz; EHF; HEMTs; InGaAs-InAlAs; MM-wave amplifiers; bandwidth improvement; broadband operation; capacitive-division topology; traveling-wave amplifier; Attenuation; Bandwidth; Broadband amplifiers; Capacitance; Distributed parameter circuits; Equivalent circuits; Gain; HEMTs; Millimeter wave technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406296

Filename

406296