New insights into breakdown modes and their evolution in ultra-thin gate oxide

Author

Lin, H.C. ; Lee, D.Y. ; Lee, C.Y. ; Chao, T.S. ; Huang, T.Y. ; Wang, T.

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

fYear

2001

fDate

2001

Firstpage

37

Lastpage

40

Abstract

By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that the soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, a unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on the device´s switching behavior are also discussed

Keywords

MIS devices; dielectric thin films; semiconductor device breakdown; semiconductor device models; switching; 3 nm; MOS devices; breakdown modes; current-voltage characteristics; post-breakdown I-V characteristics; soft-breakdown mode; switching behavior; ultra-thin gate oxide; unified model; Chaos; Current-voltage characteristics; Electric breakdown; Laboratories; MOS capacitors; MOS devices; Predictive models; Statistics; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

0-7803-6412-0

Type

conf

DOI

10.1109/VTSA.2001.934477

Filename

934477