DocumentCode
325435
Title
A bias and temperature dependent noise model of heterojunction bipolar transistors
Author
Pucel, R.A. ; Daniel, T. ; Kain, A. ; Tayrani, R.
Author_Institution
RCP Consultants, Needleham, MA, USA
Volume
1
fYear
1998
fDate
7-12 June 1998
Firstpage
141
Abstract
A bias and temperature dependent HBT noise model based on an extension of the van der Ziel noise theory is presented. An extrapolation technique is applied to the noise model that is valid for the entire bias and temperature operating range of the HBT given experimental data for a single reference condition.
Keywords
equivalent circuits; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; HBT noise model; bias dependent noise model; extrapolation technique; heterojunction bipolar transistors; temperature dependent noise model; van der Ziel noise theory; Bipolar transistors; Circuit noise; Delay; Extrapolation; Heterojunction bipolar transistors; Noise generators; Noise measurement; Parasitic capacitance; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.689342
Filename
689342
Link To Document