Thickness measurement of ultra-thin gate dielectrics under inversion condition

Author

Zhu, W.J. ; Khare, Mukesh ; Snare, J. ; Varekamp, P.R. ; Ku, S.H. ; Agnello, P. ; Chen, T.C. ; Ma, T.P.

Author_Institution

Semicond. R&D Dev. Center, IBM Corp., Hopewell Junction, NY, USA

fYear

2001

fDate

2001

Firstpage

212

Lastpage

215

Abstract

Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures

Keywords

MOS integrated circuits; ULSI; dielectric thin films; integrated circuit measurement; leakage currents; measurement errors; thickness measurement; ULSI technology; ac modulation frequency; gate leakage current; inversion condition; measurement error; series resistance; test device structures; thickness measurement; ultra-thin gate dielectrics; Current measurement; Dielectric measurements; Electrical resistance measurement; Frequency modulation; Leakage current; Measurement errors; Optimization methods; Thickness control; Thickness measurement; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

0-7803-6412-0

Type

conf

DOI

10.1109/VTSA.2001.934522

Filename

934522