DocumentCode
3254773
Title
Integration of CVD W on MOCVD TiN
Author
Yu, C.M. ; Wang, M.Y. ; Shue, S.L. ; Yu, Cody Hao ; Liang, M.S.
Author_Institution
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
fYear
2001
fDate
2001
Firstpage
261
Lastpage
263
Abstract
The integration issue of MOCVD TiN and CVD W has been investigated. The step coverage of tungsten layer was found to depend strongly on the MOCVD TiN layer. An additional thermal cycle can significantly improve step coverage of tungsten. Though the Rc value is not dependent on the step coverage of tungsten, the reliability issue is still a concern
Keywords
MOCVD; ULSI; chemical vapour deposition; diffusion barriers; integrated circuit metallisation; integrated circuit reliability; titanium compounds; tungsten; CVD W integration; MOCVD TiN; TiN; ULSI metallisation; W; W-TiN; additional thermal cycle; diffusion barriers; hole filling; plug-fill capability; reliability issue; step coverage; Adhesives; Contact resistance; MOCVD; Plasma applications; Plasma materials processing; Plasma properties; Plugs; Tin; Tungsten; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
0-7803-6412-0
Type
conf
DOI
10.1109/VTSA.2001.934534
Filename
934534
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