DocumentCode
3255005
Title
Pulsed power application assisted by power semiconductor devices
Author
Ishii, S. ; Yasuoka, K. ; Ibuka, S.
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fYear
2001
fDate
2001
Firstpage
11
Lastpage
14
Abstract
Pulsed power technology is progressively employed in industrial applications. Power semiconductor devices are promoting the development. The technical issues on power devices for pulsed power applications are summarized. A promising candidate for the fast high power switch is SI-thyristors whose capability has been verified experimentally. We point out the importance of experimental investigation on the temporal and spatial behavior of free carriers in the power devices
Keywords
carrier density; power semiconductor devices; power semiconductor switches; pulsed power technology; thyristors; SI-thyristor; carrier number density; high-power switch; industrial application; power semiconductor device; pulsed power technology; Circuits; Optical pulses; Plasma applications; Plasma sources; Power semiconductor devices; Power semiconductor switches; Pulse generation; Space vector pulse width modulation; Sparks; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934549
Filename
934549
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