• DocumentCode
    3255564
  • Title

    Using two-dimensional filament modeling to predict Ldmos and Scrldmos behavior under high current ESD conditions

  • Author

    Pendharkar, Sameer ; Hower, Phil ; Steinhoff, Robert ; Brodsky, Jonathan ; Devore, Joe ; Grose, Bill

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    A novel 2D-simulation method is used to simulate major aspects of the formation of the current filament and to help understand and predict the level of ESD robustness in lateral power devices
  • Keywords
    electrostatic discharge; power MOSFET; semiconductor device models; ESD robustness; LDMOS transistor; SCRLDMOS transistor; current filamentation; lateral power device; two-dimensional model; Bipolar transistors; Breakdown voltage; Electrostatic discharge; Failure analysis; IEC standards; Instruments; Predictive models; Resistors; Robustness; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934580
  • Filename
    934580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3255564