DocumentCode
3255791
Title
A novel 6.5 kV IGCT for high power current source inverters
Author
Weber, A. ; Kern, P. ; Dalibor, T.
fYear
2001
fDate
2001
Firstpage
215
Lastpage
218
Abstract
The emphasis of this paper is to show how the design of the Integrated Gate Commutated Thyristor (IGCT) and the commutation inductance of the drive influence the dynamic over-voltage in the current source inverter (CSI). Different semiconductor design tools to reduce dynamic over-voltage are described and the impact on other parameters such as device losses is presented. Differences between the application in CSI and voltage source inverter (VSI) are discussed
Keywords
commutation; constant current sources; invertors; overvoltage; thyristor applications; thyristors; 6.5 kV; commutation inductance; device loss; dynamic overvoltage; high-power current source inverter; integrated gate commutated thyristor; semiconductor design tool; Circuit testing; Clamps; Inductance; Inductors; Inverters; Semiconductor diodes; Snubbers; Switches; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location
Osaka
ISSN
1063-6854
Print_ISBN
4-88686-056-7
Type
conf
DOI
10.1109/ISPSD.2001.934593
Filename
934593
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