Modelling of ion-induced charge generation in high voltage diodes

Author

Kaindl, W. ; Sölkner, G. ; Voss, P. ; Wachutka, G.

Author_Institution

Inst. for Phys. of Electrotechnol., Munchen Univ., Germany

fYear

2001

fDate

2001

Firstpage

223

Lastpage

226

Abstract

In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings

Keywords

carrier density; ion beam effects; power semiconductor diodes; semiconductor device models; semiconductor plasma; carrier density; charge injection; charge multiplication; electric field; high-voltage diode; ion irradiation; ion-induced charge plasma; kinetic energy; semiconductor power device; two-dimensional simulation; Charge carriers; Conducting materials; Ion beams; Kinetic energy; Neutrons; Plasma simulation; Semiconductor diodes; Semiconductor materials; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934595

Filename

934595