Multi-ring active analogic protection for minority carrier injection suppression in smart power technology

Author

Gonnard, O. ; Charitat, G. ; Lance, Ph ; Suquet, M. ; Bafleur, M. ; Laine, J.P. ; Peyre-Lavigne, A.

Author_Institution

IAAS, CNRS, Toulouse, France

fYear

2001

fDate

2001

Firstpage

351

Lastpage

354

Abstract

Minority-carrier injection is one of the major causes of redesign in Smart Power technology. This parasitic current generated during the power stage turn off can be the source of dramatic failure such as latch-up. We propose in this paper a new protection structure able to significantly reduce the parasitic current flowing through the substrate. This new protection structure called MAAP (Multi-ring Active Analogic Protection) is self triggered by the injected current, is fully compatible with the standard technological process and reduces the parasitic current by 3 decades

Keywords

minority carriers; power integrated circuits; protection; latch-up; minority carrier injection; multi-ring active analogic protection; parasitic current; smart power technology; Automotive engineering; CMOS analog integrated circuits; Charge carrier lifetime; Diodes; Electrodes; Isolation technology; Power generation; Protection; Substrates; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934627

Filename

934627