• DocumentCode
    3256726
  • Title

    High-voltage power MOSFETs reached almost to the silicon limit

  • Author

    Kobayashi, T. ; Abe, H. ; Niimura, Y. ; Yamada, T. ; Kurosaki, A. ; Hosen, T. ; Fujihira, T.

  • Author_Institution
    Matsumoto Branch, Fuji Hitachi Power Semicond. Co. Ltd., Nagano, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    435
  • Lastpage
    438
  • Abstract
    New technologies for non-superjunction high-voltage power MOSFETs have been developed and experimentally confirmed. RON·A achieved are as low as 110% of the silicon limit and RON·QGD achieved are only 50 to 60% of the best data found. Due to the drastic improvement of RON·QGD, the developed devices have improved the power conversion efficiency of a fly-back converter by several percent. The total cost over performance of the power conversion systems can be improved by utilizing the developed technologies
  • Keywords
    power MOSFET; OGR technology; QPJ technology; fly-back converter; gate-to-drain switching charge; nonsuperjunction high-voltage power MOSFET; on-resistance; power conversion efficiency; silicon limit; Breakdown voltage; Costs; Frequency; MOSFETs; Power conversion; Power semiconductor devices; Power semiconductor switches; Silicon; Switching loss;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934646
  • Filename
    934646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3256726