Advanced 60 μm thin 600 V punch-through IGBT concept for extremely low forward voltage and low turn-off loss

Author

Matsudai, Tomoko ; Nozaki, Hideki ; Umekawa, Shinichi ; Tanaka, Masahiro ; Kobayashi, Motoshige ; Hattori, Hidetaka ; Nakagawa, Akio

Author_Institution

Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan

fYear

2001

fDate

2001

Firstpage

441

Lastpage

444

Abstract

A vertical trench gate 600 V PT (Punch Through) IGBT structure with a new concept of thin substrate wafer with a low dose n-buffer and a transparent p-emitter is proposed to realize an excellent trade-off relation between the device on-state voltage and the switching speed. In this paper, we have fabricated and evaluated 600 V/150 A rated thin wafer PT IGBT in a 60 μm thin silicon substrate. It was experimentally confirmed that 60 μm PT IGBTs with a transparent p-emitter have an excellent trade-off relation for room temperature and 125°C. Especially the fabricated 60 μm thin 600 V PT IGBTs have realized an on-state voltage as low as 1.23 V at 150 A/cm² current density with an extremely short fall-time of 60 ns for 25°C

Keywords

insulated gate bipolar transistors; 150 A; 20 C; 25 C; 60 micron; 600 V; Si; current density; fall-time; forward voltage; n-buffer; on-state voltage; punch-through IGBT; silicon substrate wafer; switching speed; transparent p-emitter; turn-off loss; vertical trench gate; Anodes; Current measurement; Current-voltage characteristics; Fabrication; Impurities; Insulated gate bipolar transistors; Low voltage; Substrates; Temperature; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Conference_Location

Osaka

ISSN

1063-6854

Print_ISBN

4-88686-056-7

Type

conf

DOI

10.1109/ISPSD.2001.934647

Filename

934647