DocumentCode
3257667
Title
Defect Chemistry of Cusbs2
Author
Perniu, D. ; Duta, A. ; Schoonman, J.
Author_Institution
Brasov Transilvania Univ.
Volume
2
fYear
2006
fDate
27-29 Sept. 2006
Firstpage
245
Lastpage
248
Abstract
The CuSbS2 exhibits adequate properties as absorber material in solar cell applications. This paper describes the defect chemistry of the CuSbS2 using lattice reactions combined with electroneutrality conditions and equilibrium constants for each intrinsic defect formation mechanism. From the proposed reactions the conductivity type of the material is indicated: ionic conduction if the deviation from molecularity is the predominant defect formation mechanism and mixed ionic-electronic conductivity in the case of a deviation from stoichiometry, and in the case of the simultaneous occurrence of a deviation from molecularity and from stoichiometry
Keywords
Frenkel defects; Schottky defects; antimony compounds; copper compounds; crystal defects; defect states; ionic conductivity; solar cells; CuSbS2; absorber material; defect chemistry; electroneutrality conditions; intrinsic defect formation mechanism; ionic conduction; lattice reactions; material conductivity type; mixed ionic-electronic conductivity; solar cell; Chemistry; Conducting materials; Conductivity; Copper; Crystalline materials; Equations; Lattices; Optical materials; Photovoltaic cells; Semiconductor materials; CuSbS2; defects;
fLanguage
English
Publisher
ieee
Conference_Titel
International Semiconductor Conference, 2006
Conference_Location
Sinaia
Print_ISBN
1-4244-0109-7
Type
conf
DOI
10.1109/SMICND.2006.283988
Filename
4063216
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