Characterization of Pulsed-Laser-Deposited Aln Films as a Gate Dielectric in Aln-Si Mis Structures

Author

Simeonov, S. ; Bakalova, S. ; Kafedjiiska, E. ; Szekeres, A. ; Grigorescu, S. ; Popescu, A. ; Cojanu, C. ; Sima, F. ; Socol, G. ; Mihailescu, I.N.

Author_Institution

Inst. of Solid State Phys., Bulgarian Acad. of Sci.

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

261

Lastpage

264

Abstract

MIS structures with AlN films deposited on p-Si substrates by pulsed laser deposition (PLD) were analyzed with respect to their capacitance-voltage and conductance-voltage characteristics, measured at different frequencies and temperatures of 77 and 300 K. The current-voltage characteristics were independent on temperature. It was shown that inter-trap tunneling could adequately account for the observed tunneling currents in these MIS structures

Keywords

MIS structures; aluminium compounds; pulsed laser deposition; silicon; tunnelling; 300 K; 77 K; AlN-Si; MIS structures; capacitance-voltage characteristics; conductance-voltage characteristics; current-voltage characteristics; gate dielectric; inter-trap tunneling; pulsed laser deposition; tunneling currents; Capacitance measurement; Capacitance-voltage characteristics; Conductive films; Current measurement; Dielectric substrates; Optical pulses; Pulse measurements; Pulsed laser deposition; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283992

Filename

4063220