Etching of p-type metal contact deposited on GaAs

Author

Mahmood, Zahid Hasan ; Bashar, Shabbir A.

Author_Institution

Dept. of Appl. Phys. & Electron., Dhaka Univ., Bangladesh

fYear

2001

fDate

2001

Firstpage

317

Lastpage

320

Abstract

In this paper, both wet etching and dry etching of metal contacts deposited on GaAs wafer have been described. A ~240 nm thin layer of p-type contact was formed on GaAs bulk wafer using Au-Zn-Au layer. Wet etching of the metal contact was done using KI-I₂ and HNO₃-HCl etch solutions and the dry etching was performed in an argon plasma reactive ion etcher chamber. Results are discussed for both the etching processes

Keywords

III-V semiconductors; electrical contacts; gallium arsenide; semiconductor technology; sputter etching; Ar; Au-Zn-Au; GaAs; HNO₃-HCl; III V semiconductor; KI-I₂; argon plasma reactive ion etcher chamber; bulk wafer; dry etching; etch solutions; metal contacts; p-type metal contact etching; wet etching; Annealing; Contact resistance; Dry etching; Gallium arsenide; Nitrogen; Semiconductor lasers; Surface emitting lasers; Thermal resistance; Waveguide lasers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2001. Proceedings of 2001 3rd International Conference on

Conference_Location

Cracow

Print_ISBN

0-7803-7096-1

Type

conf

DOI

10.1109/ICTON.2001.934779

Filename

934779

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3259215