A new spectroscopic photon emission microscope system for semiconductor device analysis

Author

Liu, I.Y. ; Tao, J.M. ; Chan, D.S.H. ; Phang, J.C.H. ; Chim, W.K.

Author_Institution

Fac. of Eng., Nat. Univ. of Singapore, Singapore

fYear

1995

fDate

27 Nov-1 Dec 1995

Firstpage

60

Lastpage

65

Abstract

This paper describes the design and performance of a new spectroscopic photon emission microscope system (SPEMS) with panchromatic imaging and continuous wavelength spectroscopic capabilities. Very low levels of light emissions from biased devices can be detected and high resolution spectral characteristics can be analysed because of the highly efficient light collection and transmission optics. Results shown include that of MOS transistors biased in saturation, forward and reverse biased pn junctions and oxide leakage. The potential use of the `defect finger-printing´ technique, whereby a unique spectral signature is assigned to each failure mechanism, is also discussed

Keywords

MOSFET; failure analysis; leakage currents; p-n junctions; photoemission; semiconductor device testing; MOS transistors; biased devices; biased pn junctions; continuous wavelength spectroscopic capabilities; defect finger-printing; failure mechanism; oxide leakage; panchromatic imaging; saturation; semiconductor device analysis; spectral characteristics; spectral signature; spectroscopic photon emission microscope; Failure analysis; High-resolution imaging; Optical filters; Optical imaging; Optical microscopy; Optical sensors; Photonic integrated circuits; Semiconductor devices; Spectroscopy; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the

Print_ISBN

0-7803-2797-7

Type

conf

DOI

10.1109/IPFA.1995.487596

Filename

487596