• DocumentCode
    3259887
  • Title

    The next generation microelectronics craft technique: Nanoimprint lithography

  • Author

    Jiang Wei ; Wang Nan ; Yan Wei ; Hu Song ; Pu Xiao-Qiong

  • Author_Institution
    Inst. of Opt. & Electron., Chengdu, China
  • fYear
    2013
  • fDate
    26-30 Aug. 2013
  • Firstpage
    337
  • Lastpage
    342
  • Abstract
    Transfer of graphics is achieved by optical lithography for several decades in semiconductor process. The production capacity of 45 nm node has been formed. But now semiconductor industry is difficult to be developed according to the Moore law because of the inherent limitations of optical lithography. Now electron-beam directwriting, X-ray exposure and nanoimprint technology are the main technologies for next generation graphics transfer technology. Nanoimprint technology has the advantages of high yield, lowcost and simple process. This paper introduced the traditional nanoimprint technology and its development, including the principle, applications and challenges.
  • Keywords
    electron beams; integrated circuits; nanolithography; photolithography; soft lithography; Moore law; X-ray exposure; electron-beam directwriting; nanoimprint lithography; next generation graphics transfer technology; next generation microelectronics craft technique; optical lithography; production capacity; semiconductor industry; semiconductor process; size 45 nm; Embossing; Graphics; Lithography; Nanoscale devices; Polymers; Printing; Substrates; Hot embossing lithography (HEL); Nanoimprint lithography (NIL); Ultraviolet nanoimprint lithography (UV-NIL);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on
  • Conference_Location
    Suzhou
  • Print_ISBN
    978-1-4799-1210-0
  • Type

    conf

  • DOI
    10.1109/3M-NANO.2013.6737445
  • Filename
    6737445