DocumentCode
3260294
Title
Fluorine Penetration Suppression By Applying Amorphous Silicon In Wsi Gate Process
Author
Wang, Han-Ching ; Shih, Chun-Hsing ; Jang, Wen-Yueh
fYear
1997
fDate
3-5 Jun 1997
Firstpage
50
Lastpage
51
Keywords
Amorphous silicon; Annealing; CMOS process; Capacitance-voltage characteristics; Contact resistance; Controllability; Design for quality; Etching; Semiconductor films; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
ISSN
1524-766X
Print_ISBN
0-7803-4131-7
Type
conf
DOI
10.1109/VTSA.1997.614725
Filename
614725
Link To Document