Low temperature CMOS VLSI technologies

Author

Wilczynski, Joerg

Author_Institution

IBM Deutschland GmbH, Boeblingen, West Germany

fYear

1989

fDate

8-12 May 1989

Firstpage

26785

Lastpage

28611

Abstract

The author presents results from compute simulations describing the general characteristics of silicon semiconductor devices in the temperature range from 80 K to 330 K. On the basis of a 0.5-μm-channel low-temperature CMOS process model, the current-voltage characteristics of n- and p-FET transistors are presented. The performance of n- and p-FETs, a 2-WAY-NAND, a 2-WAY-NOR, and an 8K-memory array are calculated as a function of temperature. The performance improvement of CMOS circuits operating at 80 K over operation at 330 K was found to be a factor of two

Keywords

CMOS integrated circuits; VLSI; electronic engineering computing; 2-WAY-NAND; 2-WAY-NOR; 80 to 330 K; FET; Si; Si semiconductor devices; compute simulations; current-voltage characteristics; low temperature CMOS VLSI; CMOS process; CMOS technology; Circuits; Computational modeling; Current-voltage characteristics; Semiconductor device modeling; Semiconductor devices; Silicon; Temperature distribution; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.

Conference_Location

Hamburg

Print_ISBN

0-8186-1940-6

Type

conf

DOI

10.1109/CMPEUR.1989.93487

Filename

93487