Robust ESD Protection Solutions in CMOS/BiCMOS Technologies

Author

Liou, Juin J. ; Salcedo, Javier A. ; Liu, Zhiwei

Author_Institution

School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL, USA

fYear

2007

fDate

3-4 June 2007

Firstpage

41

Lastpage

45

Abstract

Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-LVTSCRs) for Electrostatic Discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Experimental results demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC.

Keywords

BiCMOS integrated circuits; CMOS technology; Electrostatic discharge; IEC standards; Integrated circuit interconnections; Integrated circuit technology; Protection; Robust control; Robustness; Thyristors; Electrostatic discharge; holding voltage; latchup; silicon controlled rectifier; voltage snapback;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on

Conference_Location

Tsinghua University

Print_ISBN

1-4244-1098-3

Electronic_ISBN

1-4244-1098-3

Type

conf

DOI

10.1109/EDST.2007.4289774

Filename

4289774