A Single-Halo Dual-Material Gate SOI MOSFET

Author

Li, Zunchao ; Jiang, Yaolin ; Zhang, Lili

Author_Institution

School of Electronics and Information Eng., Xi´´an Jiaotong University, Xi´´an, Shaanxi Province, 710049, China

fYear

2007

fDate

3-4 June 2007

Firstpage

66

Lastpage

69

Abstract

A dual-material gate is applied to a single-halo SOI MOSFET in order to suppress short channel effects. Two-dimensional analytical models of surface potential and threshold voltage for the novel device are developed based on the explicit solution of the Poisson´s equation. The characteristic improvement is investigated. It is concluded that the novel structure exhibits better suppression of hot carrier effect and threshold voltage roll-off, and higher carrier transport efficiency than a single-halo SOI MOSFET. The analytical models agree well with two-dimensional device simulator MEDICI.

Keywords

Analytical models; Doping profiles; Hot carrier effects; MOSFET circuits; Medical simulation; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon; Threshold voltage; SOI; analytical model; dual material gate; halo; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on

Conference_Location

Tsinghua University

Print_ISBN

1-4244-1098-3

Electronic_ISBN

1-4244-1098-3

Type

conf

DOI

10.1109/EDST.2007.4289779

Filename

4289779