Schottky s/d MOSFETs with high-K gate dielectrics and metal gate electrodes

Author

Zhu, Shiyang ; Jingde Chen ; Yu, H.Y. ; Whang, S.J. ; Chen, Jingde ; Shen, Chih-Teng ; Li, M.-F. ; Lee, S.J. ; Zhu, Chunxiang ; Chan, D.S.H. ; Du, Anyan ; Tung, C.H. ; Singh, Jagar ; Chin, Albert ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

53

Abstract

Bulk Schottky silicide source/drain n- and p-MOS transistors (SSDTs) with EOT=2.0 ∼ 2.5nm HfO₂ gate dielectric and HfN/TaN metal gate have been successfully demonstrated using a low temperature process. P-SSDTs with PtSi silicide show excellent electrical performance of I_on/I_off∼ 10⁷ - 10⁸ and subthreshold slop of 66 mV/dec. N-SSDTs with YbSi_2-x silicide have also demonstrated a very promising characteristic with a recorded high I_on/I_off radio of ∼ 10⁷ and subthreshold slope of 75mV/dec. To the best of our knowledge, these are the best SSDTs data reported so far. The implant free low temperature process relaxes the thermal budget of high-K dielectric and metal gate materials. Our results are expected to be further improved when using ultra-thin-body (UTB) SOI structures, showing great potential of this low temperature process SSDTs for future sub-tenth micron CMOS technology.

Keywords

MOSFET; Schottky barriers; Schottky gate field effect transistors; dielectric materials; semiconductor technology; silicon-on-insulator; HfN-TaN; HfO₂; PtSi; Schottky s/d MOSFETs; YbSi; gate dielectric; high-K gate dielectrics; low temperature process; metal gate electrodes; metal gate materials; n-MOS transistor; p-MOS transistors; sub-tenth micron CMOS technology; ultra-thin-body SOI structures; CMOS technology; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Implants; Inorganic materials; MOSFETs; Silicides; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1434952

Filename

1434952