Novel Schottky barrier MOSFET with dual-layer silicide source/drain structure

Author

Li, Dingyu ; Sun, Lei ; Xia, Zhiliang ; Zhang, Shengdong ; Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

69

Abstract

An n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has been proposed for nanoscale application. In this device, the stacked source and drain of SB-MOSFET are composed with two metal silicide layers. The Schottky barrier height of the top silicide/channel contact is lower than that of the bottom silicide/channel contact. The low Schottky barrier height of top silicide/channel contact near the gate oxide improves the electron injection capability in on-state. And the high Schottky barrier height of the bottom silicide/channel contact below the top silicide layer reduces the leakage current in off-state. Simulations indicated that the performance of DS-SB-MOSFET has been significantly improved, compared with that of the conventional Schottky barrier MOSFET (SB-MOSFET).

Keywords

MOSFET; Schottky barriers; leakage currents; DS-SB-MOSFET; Schottky barrier MOSFET; dual-layer silicide source/drain structure; electron injection capability; gate oxide; leakage current; metal silicide layers; nanoscale application; silicide/channel contact; CMOS technology; Leakage current; MOSFET circuits; Microelectronics; Schottky barriers; Silicides; Silicon; Sun; Temperature; Tiles;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1434956

Filename

1434956