DocumentCode
3261613
Title
Study of charge trapping/detrapping mechanism in SiO2/HfO2 stack gate dielectrics considering two-way detrapping
Author
Shahil, K.M.Farhan ; Arafat, Md.Nayeem ; Khosru, Q.D.M. ; Khan, M.Rezwan
Author_Institution
Department of Electrical and Electronics Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
fYear
2007
fDate
3-4 June 2007
Firstpage
117
Lastpage
120
Abstract
A theoretical model for analyzing the threshold voltage instability induced by charge trapping in the MOSFETs using high-k gate dielectric stacks has been developed. The focus of this work is to investigate the role of detrapped electrons to the gate, which has been taken as negligible before. A predominant role of that effect has been observed with decreasing effective oxide thickness. It has also been found that, this effect becomes non-trivial with higher trapping time.
Keywords
Dielectric materials; Electron traps; Hafnium oxide; High-K gate dielectrics; Hysteresis; MOSFETs; Poisson equations; Space vector pulse width modulation; Threshold voltage; Tunneling; Charge trapping; EOT; high-k dielectrics; one-way detrapping; two-way detrapping;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location
Tsinghua University
Print_ISBN
1-4244-1098-3
Electronic_ISBN
1-4244-1098-3
Type
conf
DOI
10.1109/EDST.2007.4289792
Filename
4289792
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