Preparation and characterization for B3.15Nd0.85Ti3O12 thin film by sol-gel process

B3.15Nd0.85Ti3O12 (BNdT) thin films were prepared on Pt(100)/Ti/SiO2/Si(100) substrate by sol-gel process. Dense and uniform films were achieved by rapidly thermal annealing at 750°C. The perovskite crystalline and the microstructure of the thin films were investigated by XRD, SEM, and AFM. The BNdT thin film capacitors with a Pt electrode show excellent ferroelectric properties. Well-saturated polarization-electric field (P-E) switching curves were examined in the BNdT thin films. The remanent polarization and the coercive field were 43¿C/cm2 and 66kv/cm at an applied voltage of 8v, respectively, in the films annealed at 750°C. The dielectric constant and the dissipation factor were 583 and 0.07 respectively, measured at 100KHZ.