An Interesting Phenomenon in the C-V Measurements of Nanocrystal Based MOS Capacitor

The Storage characteristic of silicon nanocrystal MOS capacitor structure was investigated through the C-V measurement method. Samples with single-layer and three-layer nanocrystal were prepared at different annealing temperatures and times, respectively. The TEM photographs of samples were used to confirm the microstructures of nanocrystals. Multi-frequency C-V measurement was used to investigate the storage characteristic. The C-V measurement results showed that samples annealed at 900°C for half an hour followed by another half an hour at 1100°C shows good characteristic. In addition, the holes play an important role in the charge storage characteristic and the three-layer samples showed stair steps storage characteristic and similar charge storage characteristic with single-layer samples.