A high temperature VCO for extreme environment wireless applications

Author

Jie Yang

Author_Institution

Coll. of Inf. Sci. & Eng., Northeastern Univ., Shenyang, China

fYear

2013

fDate

7-9 Nov. 2013

Firstpage

1

Lastpage

5

Abstract

In this paper, a 60 MHz voltage controlled oscillator based on a custom-built silicon carbide (SiC) junction field effect transistor (JFET) is proposed. This SiC VCO is capable of high temperature operation up to 450 °C. A prototype is fabricated through low temperature co-fire (LTCC) process and successfully tested from room temperature to 450 °C, at which stable circuit operation is maintained. This SiC VCO is the fundamental building block of the wireless frequency modulation (FM) circuitry and can be integrated with high temperature sensing elements for wireless sensing in space exploration and other extreme environment applications.

Keywords

JFET circuits; VHF oscillators; circuit stability; voltage-controlled oscillators; SiC JFET; SiC VCO; circuit operation stability maintenance; extreme environment wireless applications; frequency 60 MHz; high temperature VCO; high temperature sensing elements; low temperature cofire process; silicon carbide junction field effect transistor; temperature 450 degC; voltage controlled oscillator; wireless frequency modulation circuitry; wireless sensing; Frequency modulation; Integrated circuit modeling; JFETs; Silicon carbide; Temperature measurement; Temperature sensors; Voltage-controlled oscillators; High Temperature; LTCC; Silicon Carbide; VCO;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless for Space and Extreme Environments (WiSEE), 2013 IEEE International Conference on

Conference_Location

Baltimore, MD

Type

conf

DOI

10.1109/WiSEE.2013.6737550

Filename

6737550