Progress in electron-beam testing

Author

Wolfgang, E. ; Görlich, S. ; Plies, E.

Author_Institution

Siemens AG, Munchen, West Germany

fYear

1989

fDate

8-12 May 1989

Abstract

To describe the progress of e-beam testing in recent years, four subaspects are examined: electron-optical improvements, waveform processing, capacitive voltage measurements, and the integration of e-beam testing with computer-aided design and testing. For the case of megabit DRAMs it can be shown that the interconnection width of the uppermost level metallization does not continue to decrease, since a two-layer metallization is used in the 17-b DRAM. In the future, therefore, greater efforts must be invested in designing for e-beam testability, whereas the electron-optical properties of existing dedicated e-beam testers appear to be well suited to meet the demands of the coming years

Keywords

electron beam applications; integrated circuit testing; random-access storage; DRAMs; capacitive voltage measurements; computer-aided design; electron-beam testing; electron-optical improvements; metallization; testing; waveform processing; Automatic testing; Circuit testing; Electron beams; Electronic equipment testing; Integrated circuit testing; Photonic integrated circuits; Physics computing; Random access memory; Scanning electron microscopy; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.

Conference_Location

Hamburg

Print_ISBN

0-8186-1940-6

Type

conf

DOI

10.1109/CMPEUR.1989.93495

Filename

93495