A 0.13 /spl mu/m CMOS platform with Cu/low-k interconnects for system on chip applications

Author

Schiml, T. ; Biesemans, S. ; Brase, G. ; Burrell, L. ; Cowley, A. ; Chen, K.C. ; Von Ehrenwall, A. ; Von Ehrenwall, B. ; Felsner, P. ; Gill, Jaswinder ; Grellner, F. ; Guarin, Fernando ; Han, L.K. ; Hoinkis, M. ; Hsiung, Edward ; Kaltalioglu, E. ; Kim, Pe

Author_Institution

IBM Corp., Hopewell Junction, NY, USA

fYear

2001

fDate

12-14 June 2001

Firstpage

101

Lastpage

102

Abstract

We describe an advanced 0.13 /spl mu/m CMOS technology platform optimized for density, performance, low power and analog/mixed signal applications. Up to 8 levels of copper interconnect with the industry´s first true low-k dielectric (SiLK, k=2.7) (Goldblatt et al., 2000) result in superior interconnect performance at aggressive pitches. A 2.28 /spl mu/m/sup 2/ SRAM cell is manufactured with high yield by introducing elongated local interconnects on the contact level without increasing process complexity. Trench based embedded DRAM is offered for large area memory. Modular analog devices as well as passive components like resistors, MIM capacitors and intrinsic inductors are integrated.

Keywords

CMOS integrated circuits; DRAM chips; MIM devices; SRAM chips; analogue processing circuits; capacitors; circuit optimisation; copper; dielectric thin films; inductors; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; low-power electronics; mixed analogue-digital integrated circuits; permittivity; resistors; 0.13 micron; CMOS platform; Cu; Cu/low-k interconnects; IC yield; MIM capacitors; SRAM cell; SiLK low-k dielectric; analog applications; circuit density; circuit performance; contact level elongated local interconnects; interconnect performance; interconnect pitch; intrinsic inductors; large area memory; low power applications; mixed signal applications; modular analog devices; multi-level copper interconnects; optimized CMOS technology platform; passive components; process complexity; resistors; system on chip applications; trench based embedded DRAM; CMOS technology; Copper; Dielectrics; MIM capacitors; Manufacturing industries; Manufacturing processes; Metals industry; Power system interconnection; Random access memory; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934969

Filename

934969