Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET´s

Author

Onishi, K. ; Kang, L. ; Choi, R. ; Dharmarajan, E. ; Gopalan, S. ; Yongjoo Jeon ; Chang Seok Kang ; Byoung Hun Lee ; Nieh, R. ; Lee, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

fYear

2001

fDate

12-14 June 2001

Firstpage

131

Lastpage

132

Abstract

Effect of dopant penetration on electrical characteristics of polysilicon gate HfO/sub 2/ gate dielectric MOSFETs has been studied quantitatively for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V/sub fb/) but channel carrier mobility. Surface nitridation prior to HfO/sub 2/ deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.

Keywords

MOSFET; carrier mobility; dielectric thin films; diffusion; doping profiles; elemental semiconductors; hafnium compounds; nitridation; semiconductor device testing; silicon; B; HfO/sub 2/ deposition; HfO/sub 2/ gate dielectric; Si-HfO/sub 2/-Si; boron penetration; boron penetration suppression; channel carrier mobility; dopant penetration; dopant penetration effects; electrical characteristics; equivalent oxide thickness reduction; flatband voltage degradation; high temperature dopant activation; polysilicon gate HfO/sub 2/ MOSFETs; surface nitridation; Annealing; Boron; Capacitance-voltage characteristics; Fabrication; Hafnium oxide; High-K gate dielectrics; MOS devices; MOSFET circuits; Temperature; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934984

Filename

934984