Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding

Author

Choquette, Kent D. ; Roberds, B. ; Geib, K.M. ; Hou, H.Q. ; Twesten, R.D. ; Lear, K.L. ; Hammons, B.E.

Author_Institution

Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

34

Abstract

We report on bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSELs) that are wafer bonded to AlGaAs substrates. We employ a simple low temperature wafer bonding process that uses inert N₂ gas during the bonding anneal rather than H₂

Keywords

annealing; gallium arsenide; laser cavity resonators; laser transitions; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; wafer bonding; 850 nm; AlGaAs; AlGaAs substrates; GaAs; N₂; bonding anneal; bottom-emitting 850 nm selectively oxidized VCSELs; inert N₂ gas; simple low temperature wafer bonding process; vertical cavity surface emitting lasers; wafer bonding; Annealing; Etching; Gallium arsenide; Hydrogen; Mirrors; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645222

Filename

645222