Effective bond strength of pyrex thin film TE bonds for microstructure applications

Author

Stratton, T.G. ; Burns, D.W. ; Speldrich, B.D.

Author_Institution

Sensor & Syst. Dev. Center, Honeywell Inc., Bloomington, MN, USA

fYear

1992

fDate

22-25 June 1992

Firstpage

82

Lastpage

85

Abstract

Thermoelectric (TE) bonds between two silicon wafers have been formed using sputtered Pyrex films. The bond area was defined by patterning and etching reliefs into a silicon wafer. The bond geometry was varied from square to circular annuli with varying widths, diameters, and corner rounding. Bond strengths were determined as a faction of bond shape and size. From rupture pressure measurements an empirical statistical model which allows prediction of bond strength as a function of bond geometry has been developed for thin film TE bonds.<>

Keywords

adhesion; borosilicate glasses; elemental semiconductors; mechanical strength; mechanical testing; silicon; sputtered coatings; thermoelectricity; wafer bonding; B/sub 2/O/sub 3/-SiO/sub 2/; Si; bond geometry; bond strength; bond strength prediction; circular annuli; corner rounding; empirical statistical model; etching; microstructure applications; patterning; pyrex thin film; rupture pressure measurements; semiconductors; sputtered coatings; thin film thermoelectric bonds; Geometry; Semiconductor films; Shape; Silicon; Sputter etching; Sputtering; Tellurium; Thermoelectricity; Transistors; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Print_ISBN

0-7803-0456-X

Type

conf

DOI

10.1109/SOLSEN.1992.228270

Filename

228270