DocumentCode
3264168
Title
A Shallow-´ikench Isolation Study For 0.18pm Cmos Technology With Emphasis On The Effects Of Well Design, Channel-stop Implants, Trenchl Depth, And Salicide Process
Author
Murtaza, Syed Shariyar ; Chatterjee, A. ; Mei, Paul ; Amerasekera, A. ; Nicollian, P. ; Kittl, J. ; Breedijk, T. ; Hanratty, M. ; Nag, S. ; Ali, I. ; Rogers, D. ; Chen, I.C.
fYear
1997
fDate
3-5 June 1997
Firstpage
133
Lastpage
137
Keywords
CMOS process; CMOS technology; Capacitance; Chemical processes; Chemical technology; Implants; Instruments; Isolation technology; Measurement; Meeting planning;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location
Taipei, Taiwan
ISSN
1524-766X
Print_ISBN
0-7803-4131-7
Type
conf
DOI
10.1109/VTSA.1997.614744
Filename
614744
Link To Document