DocumentCode
3264271
Title
Temperature coefficient of resistance of piezoresistors
Author
Sridhar, U. ; Foster, R.
Author_Institution
Honeywell Inc., Micro Switch Div., Richardson, TX, USA
fYear
1992
fDate
22-25 June 1992
Firstpage
54
Lastpage
57
Abstract
A simple method to accurately model the temperature coefficient of resistance (TCR) of ion-implanted piezoresistors in silicon is presented. The model takes into account effects of piezoresistor compensation up to an impurity concentration of 10/sup 20/ atoms/cm/sup 2/.<>
Keywords
bosons; carrier mobility; digital simulation; doping profiles; elemental semiconductors; piezoelectric devices; resistors; semiconductor technology; silicon; ICR; SUPREM III simulation; Si:B; compensation; impurity concentration; ion implanted resistor; mobility; model; piezoresistors; semiconductor device; temperature coefficient of resistance; Boron; Electric resistance; Impurities; Piezoresistive devices; Resistors; Semiconductor device modeling; Silicon; Stability; Switches; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location
Hilton Head Island, SC, USA
Print_ISBN
0-7803-0456-X
Type
conf
DOI
10.1109/SOLSEN.1992.228277
Filename
228277
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