Behavior and application of silicon diaphragms with a boss and corrugations

Author

Xiaoyi Ding

Author_Institution

Monolithic Sensors Inc., Rolling Meadows, IL, USA

fYear

1992

fDate

22-25 June 1992

Firstpage

166

Lastpage

169

Abstract

Non-planar diaphragms fabricated using the boron doped p/sup +/ etch stop technique may be deformed due to internal tensile stresses. Experiments and finite element analyses were carried out to study the effects of internal stresses on diaphragm behavior. The experimental and modeling results are consistent. Separate thermal processes performed before and after the diaphragm etch were developed to control the diaphragm deformation. By using the diaphragms with a boss and corrugations, capacitive pressure sensors with excellent linearity and large capacitance changes were fabricated for a variety of pressure ranges.<>

Keywords

deformation; diaphragms; electric sensing devices; elemental semiconductors; etching; finite element analysis; internal stresses; micromechanical devices; pressure sensors; semiconductor technology; silicon; Si:B; boss; capacitive pressure sensors; corrugations; deformation; etch stop technique; finite element analyses; internal stresses; internal tensile stresses; linearity; thermal processes; Boron; Capacitive sensors; Corrugated surfaces; Etching; Finite element methods; Internal stresses; Process control; Scanning electron microscopy; Silicon; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE

Conference_Location

Hilton Head Island, SC, USA

Print_ISBN

0-7803-0456-X

Type

conf

DOI

10.1109/SOLSEN.1992.228300

Filename

228300