Image processing in the material science or fractal behaviour on the GaAs/electrolyte interface

Author

Nemcsics, Ákos ; Schuszter, Miklós ; Dobos, László ; Turmezei, Péter

Author_Institution

Inst. for Microelectron. & Technol., Budapest

fYear

2008

fDate

26-27 Sept. 2008

Firstpage

1

Lastpage

3

Abstract

Here, pattern formation on GaAs (001) surface after electrochemical layer removal with the help of image processing was investigated. The morphology of GaAs surface shown fractal behaviour under non-selective etching conditions. The morphological surface study was carried out using digital image processing of scanning electron microscope data. The surface patterns were segmented by the so called grade of membership method. Fractal properties were established using the box counting method.

Keywords

III-V semiconductors; electrolytes; etching; gallium arsenide; scanning electron microscopy; surface morphology; GaAs; box counting method; electrochemical layer removal; electrolyte; fractal behaviour; image processing; material science; nonselective etching; pattern formation; scanning electron microscope; surface morphology; Digital images; Etching; Fractals; Gallium arsenide; Image processing; Image segmentation; Materials science and technology; Pattern formation; Scanning electron microscopy; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Systems and Informatics, 2008. SISY 2008. 6th International Symposium on

Conference_Location

Subotica

Print_ISBN

978-1-4244-2406-1

Electronic_ISBN

978-1-4244-2407-8

Type

conf

DOI

10.1109/SISY.2008.4664942

Filename

4664942