The Use Of Jet-vapor Deposited Silicon Nitride For Scaled Dram Applications

Author

Guo, X. ; Wang, X.W. ; Ma, T.P. ; Cui, G.J. ; Tamagawa, T. ; Halpern, B.L. ; Schmitt, J.J.

fYear

1997

fDate

3-5 June 1997

Firstpage

193

Lastpage

197

Keywords

Annealing; Capacitors; DRAM chips; Dielectric substrates; Electrodes; Leakage current; Nitrogen; Random access memory; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-4131-7

Type

DOI

10.1109/VTSA.1997.614756

Filename

614756

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