High-power quasi-continuous wave operation (0.97 μm) Al-free diode lasers

Author

Al-Muhanna, A. ; Mawst, L.J. ; Botez, D. ; Garbuzov, D.Z. ; Martinelli, R.U. ; Connolly, J.C.

Author_Institution

Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

205

Abstract

100 μm-wide stripe, 0.97 μm-emitting Al-free InGaAsP-InGaP-GaAs QW lasers, demonstrate a record value for quasi-CW output power, 14.3 W, low internal losses (α=1 cm^-1), and high differential quantum efficiency (86% for 2 mm-long lasers). Long cavity, large-stripe devices exhibit relatively small spectral broadening with increased output power

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical losses; quantum well lasers; spectral line broadening; waveguide lasers; 0.97 mum; 100 mum; 2 mm; 86 percent; Al-free InGaAsP-InGaP-GaAs QW lasers; Al-free diode lasers; InGaAsP-InGaP-GaAs; high differential quantum efficiency; high-power quasi-continuous wave operation; increased output power; long cavity large-stripe devices; low internal losses; quasi-CW output power; spectral broadening; Diode lasers; Electrons; Epitaxial growth; Lasers and electrooptics; Optical design; Power generation; Power lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645361

Filename

645361