The application of double-gate MOSFET mixer in digital pressure sensor

Author

Zhang, Zhaohua ; Yue, Rulfeng ; Liu, Litian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1796

Abstract

A digital pressure sensor using a double-gate MOSFET mixer is presented. The sensitive unit of this pressure sensor is comprised of MOS ring oscillators. The syntonic frequency of the ring oscillators will change according to the stress caused by pressure due to the MOSFET piezoresistive effect. The double-gate MOSFET mixer is used as an internal signal processor in order to improve the characteristics of the output signal. The pressure sensor has many good characteristics such as high sensitivity, low temperature coefficient and simple fabrication process. The device was fabricated by a standard IC process mixed with a MEMS process. The sensitivity of fabricated devices is 1.52 kHz/kPa. The temperature shift of zero output is -0.5% FS.

Keywords

MOSFET; microsensors; mixers (circuits); oscillators; piezoresistive devices; pressure sensors; MEMS process; MOS ring oscillators; MOSFET piezoresistive effect; digital pressure sensor; double-gate MOSFET mixer; low temperature coefficient; oscillator syntonic frequency; pressure stress effects; zero output temperature shift; Fabrication; Frequency; MOSFET circuits; Micromechanical devices; Piezoresistance; Ring oscillators; Sensor phenomena and characterization; Signal processing; Stress; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435182

Filename

1435182